VCTCXO / TCXO

FEATURE
- Typical 7.0x5.0x1.85 mm ceramic SMD package.
- High Precision for -40 oC~+85 oC, ±0.28ppm
- CMOS and Clipped Sine wave (without DC-cut capacitor) output optional


APPLICATION
- Femtocell, Base Stations
- WLAN/WiMAX/WiFi, Wireless Communications
- Mobile Phone

DIMENSION (mm)













ELECTRICAL SPECIFICATION





RoHS Compliant Standard

SOLDER PAD LAYOUT(mm)


Parameter 5.0V 3.3V Unit
Min. Max Min. Max.
Supply Voltage Variation (VDD) 5% 4.75 5.25 3.135 3.465 V
Frequency Range 5 40 5 40 MHz
Standard Frequency (for CMOS) 5, 6.4,8, 8.192,10,12.5,12.8,16,16.384,19.44,25
Standard Frequency (for Clipped Sine) 8.192,10,12.5,12.8,16,16.384,19.44,25
Frequency Tolerance* - ±2.0 - ±2.0 ppm
Frequency Stability
Vs Supply Voltage (±5%) change - ±0.5 - ±0.5 ppm
Vs Load (±10%) change - ±0.2 - ±0.2
Vs Aging - ±1.0 - ±1.0
Supply Current (CMOS output) - 6 - 6 mA
Supply Current (Clipped Sine Wave) - 3.5 - 3.5
Output Level (CMOS)
V
Output High (Logic “1”) 90%VDD - 90%VDD -
Output Low (Logic “0”) - 10%VDD - 10%VDD
Duty 45 55 45 55 %
Output Level (Clipped Sine Wave) 0.8 - 0.8 - Vp-p
Load (CMOS) 15pF 15pF
Load (Clipped Sine Wave) 10KΩ//10pF 10KΩ//10pF
Control Voltage Range (VCTCXO) 0.5 2.5 0.5 2.5 V
Pulling Range (VCTCXO) ±5.0 ±12.0 ±5.0 ±12.0 ppm
Vc Input Impedance (VCTCXO) 100 - 100 - KΩ
Phase Noise @ 12.8 MHz
100 Hz -120 -120 dBc / Hz
1 KHz -140 -140
10 KHz -148 -148
Start Time - 2 - 2 mSec
Tri-State
Disable - 0.3VDD - 0.3VDD V
Enable 0.7VDD - 0.7VDD -
Storage Temp. Range -55 125 -55 125 C
Standard frequencies are frequencies which the crystal has been designed and does no imply a stock position
*Frequency at 25 C, 1 hour after reflow Packing:Tape & Reel 1000/3000 pcs per Reel.











FREQ. STABILITY vs.TEMP. RANGE
ppm
Temp (C) ±0.05 ±0.1 ±0.14 ±0.28 ±0.37 ±0.5
0~+55 ○ ○ ○ ○ ○ ○
-10~+60 ○ ○ ○ ○ ○ ○
-20~+70 △ ○ ○ ○ ○ ○
-40~+85 X X X ○ ○ ○

* O: Standard

△:Available (case by case) X: Not available
Rev(3)06/2013