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Gallium Arsenide (GaAs) Wafer Zn-Doped 2
| Price: | Contact for latest price |
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| Payment Terms: | N/A |
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Product Details
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| Specification: | Gallium Arsenide (GaAs) Wafer Zn-Doped 2 |
Packaging & Delivery
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Product Description
Gallium Arsenide (GaAs) Wafer Zn-Doped 2ÿ?3ÿ?4ÿ?
Conduct Type SC/P, EPI-Ready
Diameter Ø50.8ÿ?0.2, 76.2 ÿ?0.2, 100 ÿ?.3mm
Orientation (100) 2ÿ??.5ÿ?to (110); ¥Á=45ÿ?
Thickness 350ÿ?5um, 625ÿ?5um
Primary Flat EJ [0 -1 -1] Length 16+/-2m, 22+/-2 mm
Secondary Flat EJ [0 1 -1] Length 8+/-1mm,16+/-2mm
Carrier Concentration 2-8x1018cm-3for 2ÿ? 3-50x1018cm-3 for 3ÿ?
Resistivity Standard, Mobility Standard
EPD ÿ?2000/cm2 for 2ÿ? ÿ?10,000/cm2 for 3ÿ?
Surface P/E , TTVÿ?5µm
Single wafer packing, carton box outside
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SUPPLIER PROFILE
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| Company: | Sichuan Western Minmetals Co | ||
| City/State | Chengdu, Sichuan | Country: |
China 
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| Business Type: | Export - Manufacturer / Trading Company | Established: | 1997 |
| Member Since: | 2008 | Contact Person | Sheldon Woo |
SUPPLIER PROFILE
City/State/Country -
Chengdu, Sichuan
China
Business Type -
Export - Manufacturer / Trading Company
Established -
1997
Member Since -
2008
Contact Person -
Sheldon Woo