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Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2
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Product Details
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| Specification: | Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2 |
Packaging & Delivery
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Product Description
Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2ÿ?3ÿ?
Conduct Type N, VGF growth, EPI-Ready
Diameter 50.8ÿ?.2 mm, 76.2ÿ?.3 mm
Thickness350ÿ?5µm, 625+/-25um
Orientation (100)0ÿ?.50
Primary Flat EJ [0-1-1] ÿ?.50 Length16ÿ? mm, 22ÿ?mm
Secondary Flat EJ [0 -1 1] ÿ?.50 length7ÿ?mm, 12ÿ?mm
Resistivity ¡¾1ÿ?07 Ohm.cm
Mobility¡¾5000 cm2/v.s EPD¡¼10000 /cm2
TTV/BOW/Warp ÿ?0µm for 2ÿ? ÿ?5µm for 3ÿ?
Edge0.25 mmR, Surface P/P
Single wafer packing, carton box outside.
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SUPPLIER PROFILE
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| Company: | Sichuan Western Minmetals Co | ||
| City/State | Chengdu, Sichuan | Country: |
China 
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| Business Type: | Export - Manufacturer / Trading Company | Established: | 1997 |
| Member Since: | 2008 | Contact Person | Sheldon Woo |
SUPPLIER PROFILE
City/State/Country -
Chengdu, Sichuan
China
Business Type -
Export - Manufacturer / Trading Company
Established -
1997
Member Since -
2008
Contact Person -
Sheldon Woo