Crystal growth furnace

AE-6000C-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, Using czochralski Technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices.
Main technical parameters
Properties Model
AE-85 AE-95 AE-120
Diameter of Growth Tank (mm) 850 950 1200
Ingot diameter (inch) 6 - 8 8 - 10 8-16
Silica crucible size (inch) 18-20 22-24 24-28
Max charge amount (Kg) 95 150 260
Max crystal length (mm) 2000 2000 2000
Seed pulling rate（mm/Hr） 0-508 0-508 0-508
Seed Jog Speed (mm/Min) 0-508 0-508 0-508
Seed rotation rate (rpm) 0-40 0-40 0-40
Crucible Elevate Rate (mm/Hr) 0-128 0-128 0-128
Crucible Jog Speed (mm/Min) 0-50.8 0-50.8 0-50.8
Crucible rotation rate (rpm) 0-20 0-20 0-20
Crucible Travel stroke (mm) 400 420 480
Maximum weight for
crucible support (Kg) 165 230 450
Main line pump rate (SL/Sec) 70 70 150
Auxiliary pump rate (SL/Sec) 8 8 8
Ultimate pressure (Pa) less than 4 less than 4 less than 4
Permissible leak rate (Pa/Hr) less than 6 less than 6 less than 6
Gas flow control range (SL/Min) 4-200 4-200 4-200
Working pressure range (Pa) 1500-5000 1500-5000 1500-5000
AC power input (3 phase, 380V) 140 KW 200 KW 250 KW
Number of Heating Elements 1 2 2
Magnetic Coil Optional Optional Optional